Invention Application
- Patent Title: THIN FILMS MEASUREMENT METHOD AND SYSTEM
- Patent Title (中): 薄膜测量方法和系统
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Application No.: US13270647Application Date: 2011-10-11
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Publication No.: US20120044506A1Publication Date: 2012-02-23
- Inventor: Yoel COHEN , Moshe FINAROV , Klara VINOKUR
- Applicant: Yoel COHEN , Moshe FINAROV , Klara VINOKUR
- Applicant Address: IL Rehovot
- Assignee: NOVA MEASURING INSTRUMENTS LTD.
- Current Assignee: NOVA MEASURING INSTRUMENTS LTD.
- Current Assignee Address: IL Rehovot
- Priority: IL150438 20020626
- Main IPC: G01B11/28
- IPC: G01B11/28

Abstract:
A method and system are provided for controlling processing of a structure. First measured data is provided being indicative of at least one of: a thickness (d2) of at least one layer (L2) of the structure W in at least selected sites of the structure prior to processing of the structure, and a surface profile of the structure prior to processing. An optical measurement is applied to at least the selected sites of the structure after processing and second measured data is generated being indicative of at least one of: a thickness of the processed structure (d′) and a surface profile of the processed structure. The second measured data is analyzed by interpreting it using the first measured data to determine a thickness (d′1 or d′2) of at least one layer of the processed structure. This determined thickness is indicative of the quality of processing.
Public/Granted literature
- US08564793B2 Thin films measurement method and system Public/Granted day:2013-10-22
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