发明申请
US20120044749A1 VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL
审中-公开
可变电阻非易失性存储器件及形成存储器单元的方法
- 专利标题： VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL
- 专利标题（中）： 可变电阻非易失性存储器件及形成存储器单元的方法
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申请号： US13266932申请日： 2010-11-02
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公开(公告)号： US20120044749A1公开(公告)日： 2012-02-23
- 发明人: Shunsaku Muraoka , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
- 申请人： Shunsaku Muraoka , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
- 优先权： JP2009-252407 20091102
- 国际申请： PCT/JP2010/006453 WO 20101102
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L21/8239 ; H01L45/00
摘要：
A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate (301), (ii) a variable resistance element (309) having: lower and upper electrodes (309a, 309c); and a variable resistance layer (309b) whose resistance value reversibly varies based on voltage signals each of which has a different polarity and is applied between the electrodes (309a, 309c), and (iii) a MOS transistor (317) formed on the substrate (301), wherein the variable resistance layer (309b) includes: oxygen-deficient transition metal oxide layers (309b-1, 309b-2) having compositions MOx and MOy (where x
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