发明申请
US20120045873A1 Methods of Forming CMOS Transistors Using Tensile Stress Layers and Hydrogen Plasma Treatment
有权
使用拉伸应力层和氢等离子体处理形成CMOS晶体管的方法
- 专利标题： Methods of Forming CMOS Transistors Using Tensile Stress Layers and Hydrogen Plasma Treatment
- 专利标题（中）： 使用拉伸应力层和氢等离子体处理形成CMOS晶体管的方法
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申请号： US12859644申请日： 2010-08-19
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公开(公告)号： US20120045873A1公开(公告)日： 2012-02-23
- 发明人: Yong-Kuk Jeong , Laegu Kang , Kim Nam Sung , Dae-won Yang
- 申请人： Yong-Kuk Jeong , Laegu Kang , Kim Nam Sung , Dae-won Yang
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336
摘要：
Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma.
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