发明申请
- 专利标题： METHOD OF MAKING INTERCONNECT STRUCTURE
- 专利标题（中）： 制造互连结构的方法
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申请号： US13285007申请日： 2011-10-31
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公开(公告)号： US20120045893A1公开(公告)日： 2012-02-23
- 发明人: Heinrich Koerner
- 申请人： Heinrich Koerner
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
One or more embodiments relate to a method of forming a semiconductor device having a substrate, comprising: providing a Si-containing layer; forming a barrier layer over the Si-containing layer, the barrier layer comprising a compound including a metallic element; forming a metallic nucleation_seed layer over the Si-containing layer, the nucleation_seed layer including the metallic element; and forming a metallic interconnect layer over the nucleation_seed layer, wherein the barrier layer and the nucleation_seed layer are formed without exposing the semiconductor device substrate to the ambient atmosphere.
公开/授权文献
- US08946074B2 Method of making interconnect structure 公开/授权日：2015-02-03
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