发明申请
- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS
- 专利标题（中）： 制造半导体器件的方法，加工基板和基板处理装置的方法
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申请号： US13286314申请日： 2011-11-01
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公开(公告)号： US20120045905A1公开(公告)日： 2012-02-23
- 发明人: Naonori AKAE , Yoshiro Hirose , Yushin Takasawa , Yosuke Ota , Ryota Sasajima
- 申请人： Naonori AKAE , Yoshiro Hirose , Yushin Takasawa , Yosuke Ota , Ryota Sasajima
- 优先权： JP2009-226420 20090930; JP2010-152031 20100702
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/318 ; C23C16/52 ; C23C16/40 ; C23C16/455 ; H01L21/316 ; C23C16/34
摘要：
Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel.
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