发明申请
US20120049269A1 ISOLATION STRUCTURE, NON-VOLATILE MEMORY HAVING THE SAME, AND METHOD OF FABRICATING THE SAME
有权
隔离结构，具有该隔离结构的非易失性存储器及其制造方法
- 专利标题： ISOLATION STRUCTURE, NON-VOLATILE MEMORY HAVING THE SAME, AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 隔离结构，具有该隔离结构的非易失性存储器及其制造方法
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申请号： US13291374申请日： 2011-11-08
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公开(公告)号： US20120049269A1公开(公告)日： 2012-03-01
- 发明人: Ming-Da Cheng , Chin-Tsan Yeh , Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
- 申请人： Ming-Da Cheng , Chin-Tsan Yeh , Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L29/06
摘要：
A method of forming an isolation structure, comprising: (a) providing a base having a recess; (b) forming a stop layer on the base and in the recess; (c) forming a dielectric material on the stop layer so as to allow the rest of the recess to be filled with the dielectric material; (d) removing the dielectric material over the base by performing a chemical mechanical polishing (CMP) process until a part of the stop layer is exposed so as to form a dielectric layer in the recess; and (e) removing a part of the stop layer, wherein the another part of the stop layer and the dielectric layer filled in the recess constitute the isolation structure.
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