发明申请
US20120049296A1 Oxide Deposition by Using a Double Liner Approach for Reducing Pattern Density Dependence in Sophisticated Semiconductor Devices
有权
通过使用双层衬底方法来降低精密半导体器件中的图案密度依赖性的氧化物沉积
- 专利标题： Oxide Deposition by Using a Double Liner Approach for Reducing Pattern Density Dependence in Sophisticated Semiconductor Devices
- 专利标题（中）： 通过使用双层衬底方法来降低精密半导体器件中的图案密度依赖性的氧化物沉积
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申请号： US13183549申请日： 2011-07-15
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公开(公告)号： US20120049296A1公开(公告)日： 2012-03-01
- 发明人: Stephan Kronholz , Markus Lenski , Kerstin Ruttloff , Volker Jaschke
- 申请人： Stephan Kronholz , Markus Lenski , Kerstin Ruttloff , Volker Jaschke
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 优先权： DE102010040060.2 20100831
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/336 ; H01L21/314
摘要：
A silicon dioxide material may be provided in sophisticated semiconductor devices in the form of a double liner including an undoped silicon dioxide material in combination with a high density plasma silicon dioxide, thereby providing reduced dependency on pattern density. In some illustrative embodiments, the silicon dioxide double liner may be used as a spacer material and as a hard mask material in process strategies for incorporating a strain-inducing semiconductor material.