发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13225648申请日： 2011-09-06
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公开(公告)号： US20120056241A1公开(公告)日： 2012-03-08
- 发明人: Masakiyo SUMITOMO , Yasushi Higuchi , Shigemitsu Fukatsu
- 申请人： Masakiyo SUMITOMO , Yasushi Higuchi , Shigemitsu Fukatsu
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2010-200764 20100908; JP2011-145461 20110630
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L21/331 ; H01L21/28
摘要：
A semiconductor device includes a drift layer, a base layer on the drift layer, and trench gate structures. Each trench gate structure includes a trench reaching the drift layer by penetrating the base layer, a gate insulation layer on a wall surface of the trench, and a gate electrode on the gate insulation layer. A bottom portion of the trench gate structure is located in the drift layer and expands in a predetermined direction so that a distance between the bottom portions of adjacent trench gate structures is less than a distance between opening portions of adjacent trench gate structures in the direction. A thickness of the gate insulation layer is greater in the bottom portion than in the opening portion.
公开/授权文献
- US08659065B2 Semiconductor device and method of manufacturing the same 公开/授权日：2014-02-25
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