Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13294945Application Date: 2011-11-11
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Publication No.: US20120056295A1Publication Date: 2012-03-08
- Inventor: CHIH-PING LIN , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
- Applicant: CHIH-PING LIN , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Priority: TWTW97110053 20080321
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.
Public/Granted literature
- US09219012B2 Semiconductor device Public/Granted day:2015-12-22
Information query
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