发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13294945申请日： 2011-11-11
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公开(公告)号： US20120056295A1公开(公告)日： 2012-03-08
- 发明人: CHIH-PING LIN , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
- 申请人： CHIH-PING LIN , Pi-Kuang Chuang , Hung-Li Chang , Shih-Ming Chen , Hsiao-Ying Yang
- 申请人地址： TW Hsinchu
- 专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 优先权： TWTW97110053 20080321
- 主分类号： H01L27/06
- IPC分类号： H01L27/06
摘要：
A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.
公开/授权文献
- US09219012B2 Semiconductor device 公开/授权日：2015-12-22