Invention Application
- Patent Title: METHODS OF FORMING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHIC SHOT GROUPING
- Patent Title (中): 使用光刻机分组形成半导体器件的方法
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Application No.: US13219579Application Date: 2011-08-26
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Publication No.: US20120058432A1Publication Date: 2012-03-08
- Inventor: Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
- Applicant: Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Priority: KR10-2010-0087667 20100907
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.
Public/Granted literature
- US08475980B2 Methods of forming semiconductor devices using photolithographic shot grouping Public/Granted day:2013-07-02
Information query
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