发明申请
- 专利标题： ELECTROSTATIC CAPACITANCE ELEMENT, METHOD OF MANUFACTURING ELECTROSTATIC CAPACITANCE ELEMENT, AND RESONANCE CIRCUIT
- 专利标题（中）： 静电电容元件，制造静电电容元件和谐振电路的方法
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申请号： US13225608申请日： 2011-09-06
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公开(公告)号： US20120062338A1公开(公告)日： 2012-03-15
- 发明人: Masayoshi Kanno
- 申请人： Masayoshi Kanno
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-203580 20100910
- 主分类号： H03H7/00
- IPC分类号： H03H7/00 ; H01G5/04
摘要：
An electrostatic capacitance element includes: a dielectric layer; and a pair of electrodes or a plurality of pairs of electrodes having one electrode formed on one surface of the dielectric layer and the other electrode formed on the other surface of the dielectric layer by interposing the dielectric layer therebetween. The one electrode and the other electrode are arranged such that longitudinal directions of the electrodes intersect with each other. In addition, the one electrode and/or the other electrode have at least two electrode widths. In a case where the one electrode is formed to be relatively shifted with respect to the other electrode, an area of the electrodes overlapping in a thickness direction of the dielectric layer by interposing the dielectric layer can be changed in a continuous manner or a stepwise manner.