发明申请
US20120063218A1 SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR MAGNETIC ANISOTROPY MULTILAYERS
有权
旋转转子扭矩磁性随机存取存储器，带有全息磁性多面体多层
- 专利标题： SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR MAGNETIC ANISOTROPY MULTILAYERS
- 专利标题（中）： 旋转转子扭矩磁性随机存取存储器，带有全息磁性多面体多层
-
申请号： US13225338申请日： 2011-09-02
-
公开(公告)号： US20120063218A1公开(公告)日： 2012-03-15
- 发明人: Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
- 申请人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
- 申请人地址： US CA Fremont
- 专利权人： Avalanche Technology, Inc.
- 当前专利权人： Avalanche Technology, Inc.
- 当前专利权人地址： US CA Fremont
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; H01L29/82
摘要：
A spin-torque transfer memory random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer, the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization have a preferred direction perpendicular to film plane.
公开/授权文献
信息查询
