发明申请
US20120064680A1 METHODS OF FORMING A CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
审中-公开
形成电容器结构的方法和使用其制造半导体器件的方法
- 专利标题: METHODS OF FORMING A CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
- 专利标题(中): 形成电容器结构的方法和使用其制造半导体器件的方法
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申请号: US13228867申请日: 2011-09-09
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公开(公告)号: US20120064680A1公开(公告)日: 2012-03-15
- 发明人: Jung-Min Oh , Bo-Un Yoon , Gyu-Wan Choi , Kun-Tack Lee , Dae-Hyuk Kang , Im-Soo Park , Dong-Seok Lee , Young-Hoo Kim
- 申请人: Jung-Min Oh , Bo-Un Yoon , Gyu-Wan Choi , Kun-Tack Lee , Dae-Hyuk Kang , Im-Soo Park , Dong-Seok Lee , Young-Hoo Kim
- 优先权: KR10-2010-0090390 20100915
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01G13/06
摘要:
A method of forming a capacitor structure and manufacturing a semiconductor device, the method of forming a capacitor structure including sequentially forming a first mold layer, a supporting layer, a second mold layer, an anti-bowing layer, and a third mold layer on a substrate having a conductive region thereon; partially removing the third mold layer, the anti-bowing layer, the second mold layer, the supporting layer, and the first mold layer to form a first opening exposing the conductive region; forming a lower electrode on a sidewall and bottom of the first opening, the lower electrode being electrically connected to the conductive region; further removing the third mold layer, the anti-bowing layer, and the second mold layer; partially removing the supporting layer to form a supporting layer pattern; removing the first mold layer; and sequentially forming a dielectric layer and upper electrode on the lower electrode and the supporting layer pattern.