Invention Application
US20120067275A1 COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS
有权
化合物半导体器件，其中包括控制层的一层
- Patent Title: COMPOUND SEMICONDUCTOR DEVICE INCLUDING AIN LAYER OF CONTROLLED SKEWNESS
- Patent Title (中): 化合物半导体器件，其中包括控制层的一层
-
Application No.: US13237084Application Date: 2011-09-20
-
Publication No.: US20120067275A1Publication Date: 2012-03-22
- Inventor: Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- Applicant: Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
- Applicant Address: JP Tokyo JP Kawasaki-shi
- Assignee: HITACHI CABLE CO., LTD.,FUJITSU LIMITED
- Current Assignee: HITACHI CABLE CO., LTD.,FUJITSU LIMITED
- Current Assignee Address: JP Tokyo JP Kawasaki-shi
- Priority: JP2007-093574 20070330
- Main IPC: C30B25/10
- IPC: C30B25/10 ; C30B25/02
Abstract:
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
Public/Granted literature
- US08440549B2 Compound semiconductor device including aln layer of controlled skewness Public/Granted day:2013-05-14
Information query
IPC分类:
