公开(公告)号：US20120067275A1

公开(公告)日：2012-03-22

申请号：US13237084

申请日：2011-09-20

申请人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

发明人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

IPC分类号： C30B25/10 ,  C30B25/02

CPC分类号： H01L21/02581 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262

摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

摘要翻译： 半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度 是积极的。

公开(公告)号：US08264005B2

公开(公告)日：2012-09-11

申请号：US12772661

申请日：2010-05-03

申请人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

发明人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

IPC分类号： H01L29/778 ,  H01L21/20

CPC分类号： H01L21/02581 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262

摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

公开(公告)号：US08044492B2

公开(公告)日：2011-10-25

申请号：US12059693

申请日：2008-03-31

申请人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

发明人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

IPC分类号： H01L29/30 ,  H01L33/22

CPC分类号： H01L21/02581 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262

摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

摘要翻译： 半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和AlN层之间的界面，并且所述AlN层的上表面的偏斜度 是积极的。

公开(公告)号：US08440549B2

公开(公告)日：2013-05-14

申请号：US13237084

申请日：2011-09-20

申请人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

发明人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

IPC分类号： H01L21/20 ,  H01L33/32

CPC分类号： H01L21/02581 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262

摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

摘要翻译： 半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度 是积极的。

公开(公告)号：US08264006B2

公开(公告)日：2012-09-11

申请号：US12772624

申请日：2010-05-03

申请人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

发明人： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

IPC分类号： H01L29/778 ,  H01L21/20

CPC分类号： H01L21/02581 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262

摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

摘要翻译： 半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度 是积极的。

公开(公告)号：US08193539B2

公开(公告)日：2012-06-05

申请号：US12889724

申请日：2010-09-24

申请人： Toshihide Kikkawa ,  Kenji Imanishi

发明人： Toshihide Kikkawa ,  Kenji Imanishi

IPC分类号： H01L29/24

CPC分类号： H01L29/7787 ,  H01L21/02378 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer layer not containing Cl; and a device constituent layer or layers formed above said compound semiconductor buffer layer not containing Cl.

摘要翻译： 化合物半导体器件包括：导电SiC衬底; 形成在所述导电性SiC基板上并含有Cl的AlN缓冲层; 在包含Cl的所述AlN层上形成的化合物半导体缓冲层，所述化合物半导体缓冲层不含Cl; 以及在不含Cl的化合物半导体缓冲层的上方形成的器件构成层。

公开(公告)号：US20120056191A1

公开(公告)日：2012-03-08

申请号：US13152426

申请日：2011-06-03

申请人： Hiroshi Endo ,  Tadahiro Imada ,  Kenji Imanishi ,  Toshihide Kikkawa

发明人： Hiroshi Endo ,  Tadahiro Imada ,  Kenji Imanishi ,  Toshihide Kikkawa

IPC分类号： H01L29/778 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L21/30612 ,  H01L21/30621 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/66462

摘要： A semiconductor device includes a GaN electron transport layer provided over a substrate; a first AlGaN electron supply layer provided over the GaN electron transport layer; an AlN electron supply layer provided over the first AlGaN electron supply layer; a second AlGaN electron supply layer provided over the AlN electron supply layer; a gate recess provided in the second AlGaN electron supply layer and the AlN electron supply layer; and a gate electrode provided over the gate recess.

摘要翻译： 半导体器件包括设置在衬底上的GaN电子传输层; 设置在所述GaN电子传输层上的第一AlGaN电子供给层; 设置在所述第一AlGaN电子供给层上的AlN电子供给层; 设置在AlN电子供给层上的第二AlGaN电子供给层; 设置在所述第二AlGaN电子供给层和所述AlN电子供给层中的栅极凹部; 以及设置在栅极凹部上方的栅电极。

公开(公告)号：US20100066451A1

公开(公告)日：2010-03-18

申请号：US12591574

申请日：2009-11-24

申请人： Toshihide Kikkawa ,  Kenji Imanishi

发明人： Toshihide Kikkawa ,  Kenji Imanishi

IPC分类号： H03F3/16 ,  H01L29/778

CPC分类号： H01L29/7785 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66462 ,  H03F1/0288

摘要： A lower electron supply layer is disposed over a lower electron transport layer made of compound semiconductor. The lower electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the lower electron transport layer. An upper electron transport layer is disposed over the lower electron supply layer. The upper electron transport layer is made of compound semiconductor having a doping concentration lower than that of the lower electron supply layer or non-doped compound semiconductor. An upper electron supply layer is disposed over the upper electron transport layer. The upper electron supply layer is made of n-type compound semiconductor having an electron affinity smaller than that of the upper electron transport layer. A source and drain electrodes are disposed over the upper electron supply layer. A gate electrode is disposed over the upper electron supply layer between the source and drain electrodes.

公开(公告)号：US08912571B2

公开(公告)日：2014-12-16

申请号：US13294654

申请日：2011-11-11

申请人： Masahito Kanamura ,  Toshihide Kikkawa ,  Kenji Imanishi

发明人： Masahito Kanamura ,  Toshihide Kikkawa ,  Kenji Imanishi

IPC分类号： H01L29/66 ,  H01L21/338 ,  H01L29/51 ,  H01L29/778 ,  H01L29/417

CPC分类号： H01L29/7787 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/47 ,  H01L29/513 ,  H01L29/66462

摘要： A compound semiconductor device includes: a compound semiconductor layer; a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a non-charged state at an interface with the compound semiconductor layer; a second film formed over the first film, the second film being in a positively charged state at an interface with the first film; and a gate electrode to be embedded in an opening formed in the second film.

摘要翻译： 化合物半导体器件包括：化合物半导体层; 形成在所述化合物半导体层上的第一膜，所述第一膜在与所述化合物半导体层的界面处于带负电状态或非带电状态; 形成在所述第一膜上的第二膜，所述第二膜在与所述第一膜的界面处于带电状态; 以及嵌入到形成在第二膜中的开口中的栅电极。

公开(公告)号：US08426892B2

公开(公告)日：2013-04-23

申请号：US12034273

申请日：2008-02-20

申请人： Kenji Imanishi ,  Toshihide Kikkawa

发明人： Kenji Imanishi ,  Toshihide Kikkawa

IPC分类号： H01L29/267 ,  H01L21/338

CPC分类号： H01L29/66431 ,  H01L21/02378 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/107 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/812

摘要： A compound semiconductor device has a buffer layer formed on a conductive SiC substrate, an AlxGa1-xN layer formed on the buffer layer in which an impurity for reducing carrier concentration from an unintentionally doped donor impurity is added and in which the Al composition x is 0

摘要翻译： 化合物半导体器件具有形成在导电性SiC衬底上的缓冲层，形成在缓冲层上的Al x Ga 1-x N层，其中添加用于降低来自无意掺杂的施主杂质的载流子浓度的杂质，其中Al组分x为0