Invention Application
US20120068161A1 METHOD FOR FORMING GRAPHENE USING LASER BEAM, GRAPHENE SEMICONDUCTOR MANUFACTURED BY THE SAME, AND GRAPHENE TRANSISTOR HAVING GRAPHENE SEMICONDUCTOR
审中-公开
使用激光束形成石墨的方法,由其制造的石墨半导体和具有石墨半导体的石墨晶体管
- Patent Title: METHOD FOR FORMING GRAPHENE USING LASER BEAM, GRAPHENE SEMICONDUCTOR MANUFACTURED BY THE SAME, AND GRAPHENE TRANSISTOR HAVING GRAPHENE SEMICONDUCTOR
- Patent Title (中): 使用激光束形成石墨的方法,由其制造的石墨半导体和具有石墨半导体的石墨晶体管
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Application No.: US13233553Application Date: 2011-09-15
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Publication No.: US20120068161A1Publication Date: 2012-03-22
- Inventor: Keon-Jae LEE , In-Sung Choi , Sung-Yool Choi , Byung-Hee Hong
- Applicant: Keon-Jae LEE , In-Sung Choi , Sung-Yool Choi , Byung-Hee Hong
- Priority: KR10-2010-0091217 20100916; KR10-2010-0091599 20100917; KR10-2010-0091600 20100917; KR10-2011-0006115 20110111
- Main IPC: H01L29/66
- IPC: H01L29/66 ; B01J19/12 ; H01L21/268 ; B82Y40/00 ; B82Y30/00

Abstract:
A method for forming graphene includes introducing a substrate and a carbon-containing reactant source into a chamber, and radiating a laser beam onto the substrate to decompose the carbon-containing reactant source and form graphene over the substrate using carbon atoms generated by decomposition of the carbon-containing reactant source. A carbon-containing gas (methane) decomposes upon radiation of a laser beam. The carbon-containing gas has a decomposition rate on the order of femtoseconds and the laser beam has a pulse on the order of nanoseconds or more. The graphene is grown in a single layer along the surface of the substrate. Then, the graphene is selectively patterned using a laser beam to form a desired pattern.
Information query
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