Invention Application
US20120069665A1 Memory Device With Vertically Embedded Non Flash Non Volatile Memory For Emulation Of Nand Flash Memory
有权
具有垂直嵌入式非闪存非易失性存储器的存储器件用于Nand闪存的仿真
- Patent Title: Memory Device With Vertically Embedded Non Flash Non Volatile Memory For Emulation Of Nand Flash Memory
- Patent Title (中): 具有垂直嵌入式非闪存非易失性存储器的存储器件用于Nand闪存的仿真
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Application No.: US13303016Application Date: 2011-11-22
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Publication No.: US20120069665A1Publication Date: 2012-03-22
- Inventor: ROBERT NORMAN
- Applicant: ROBERT NORMAN
- Applicant Address: US CA SUNNYVALE
- Assignee: UNITY SEMICONDUCTOR CORPORATION
- Current Assignee: UNITY SEMICONDUCTOR CORPORATION
- Current Assignee Address: US CA SUNNYVALE
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/04

Abstract:
A system and a method for emulating a NAND memory system are disclosed. In the method, a command associated with a NAND memory is received. After receipt of the command, a vertically configured non-volatile memory array is accessed based on the command. In the system, a vertically configured non-volatile memory array is connected with an input/output controller and a memory controller. The memory controller is also connected with the input/output controller. The memory controller is operative to interface with a command associated with a NAND memory and based on the command, to access the vertically configured non-volatile memory array for a data operation, such as a read operation or write operation. An erase operation on the vertically configured non-volatile memory array is not required prior to the write operation. The vertically configured non-volatile memory array can be partitioned into planes, blocks, and sub-planes, for example.
Public/Granted literature
- US08255619B2 Memory device with vertically embedded non flash non volatile memory for emulation of NAND flash memory Public/Granted day:2012-08-28
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