Invention Application
US20120069665A1 Memory Device With Vertically Embedded Non Flash Non Volatile Memory For Emulation Of Nand Flash Memory 有权
具有垂直嵌入式非闪存非易失性存储器的存储器件用于Nand闪存的仿真

  • Patent Title: Memory Device With Vertically Embedded Non Flash Non Volatile Memory For Emulation Of Nand Flash Memory
  • Patent Title (中): 具有垂直嵌入式非闪存非易失性存储器的存储器件用于Nand闪存的仿真
  • Application No.: US13303016
    Application Date: 2011-11-22
  • Publication No.: US20120069665A1
    Publication Date: 2012-03-22
  • Inventor: ROBERT NORMAN
  • Applicant: ROBERT NORMAN
  • Applicant Address: US CA SUNNYVALE
  • Assignee: UNITY SEMICONDUCTOR CORPORATION
  • Current Assignee: UNITY SEMICONDUCTOR CORPORATION
  • Current Assignee Address: US CA SUNNYVALE
  • Main IPC: G11C16/10
  • IPC: G11C16/10 G11C16/04
Memory Device With Vertically Embedded Non Flash Non Volatile Memory For Emulation Of Nand Flash Memory
Abstract:
A system and a method for emulating a NAND memory system are disclosed. In the method, a command associated with a NAND memory is received. After receipt of the command, a vertically configured non-volatile memory array is accessed based on the command. In the system, a vertically configured non-volatile memory array is connected with an input/output controller and a memory controller. The memory controller is also connected with the input/output controller. The memory controller is operative to interface with a command associated with a NAND memory and based on the command, to access the vertically configured non-volatile memory array for a data operation, such as a read operation or write operation. An erase operation on the vertically configured non-volatile memory array is not required prior to the write operation. The vertically configured non-volatile memory array can be partitioned into planes, blocks, and sub-planes, for example.
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