发明申请
- 专利标题: THERMAL CONDUCTIVITY SUBSTRATE AND MANUFACTURING METHOD THEREOF
- 专利标题(中): 热导率基板及其制造方法
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申请号: US13046785申请日: 2011-03-14
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公开(公告)号: US20120070684A1公开(公告)日: 2012-03-22
- 发明人: Chin-Sheng Wang , Ching-Sheng Chen , Chien-Hung Wu
- 申请人: Chin-Sheng Wang , Ching-Sheng Chen , Chien-Hung Wu
- 申请人地址: TW Hsinchu County
- 专利权人: SUBTRON TECHNOLOGY CO. LTD.
- 当前专利权人: SUBTRON TECHNOLOGY CO. LTD.
- 当前专利权人地址: TW Hsinchu County
- 优先权: TW99131636 20100917
- 主分类号: B32B15/04
- IPC分类号: B32B15/04 ; B32B38/00 ; C25D5/16 ; B32B37/00
摘要:
A thermal conductivity substrate including a metal substrate, a metal layer, an insulating layer, a plurality of conductive structures, a first conductive layer and a second conductive layer is provided. The metal layer is disposed on the metal substrate and entirely covers the metal substrate. The insulating layer is disposed on the metal layer. The conductive structures are embedded in the insulating layer and connected to a portion of the metal layer. The first conductive layer is disposed on the insulating layer. The second conductive layer is disposed on the first conductive layer and the conductive structures. The second conductive layer is electrically connected to a portion of the metal layer through the conductive structures. The second conductive layer and the conductive structures are integrally formed.