发明申请
- 专利标题： DIELECTRIC STACK
- 专利标题（中）： 电介质堆叠
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申请号： US12888434申请日： 2010-09-23
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公开(公告)号： US20120074537A1公开(公告)日： 2012-03-29
- 发明人: Sung Mun JUNG , Swee Tuck WOO , Sanford CHU , Liang Choo HSIA
- 申请人： Sung Mun JUNG , Swee Tuck WOO , Sanford CHU , Liang Choo HSIA
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人： GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L29/51
- IPC分类号： H01L29/51 ; H01L21/31 ; H01L21/66
摘要：
A method of forming a device is disclosed. The method includes providing a substrate and forming a device layer on the substrate having a formed thickness TFD. A capping layer is formed on the substrate having a formed thickness TFC. Forming the capping layer consumes a desired amount of the device layer to cause the thickness of the device layer to be about the target thickness TTD. The thickness of the capping layer is adjusted from TFC to about a target thickness TTC.
公开/授权文献
- US08541273B2 Dielectric stack 公开/授权日：2013-09-24
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