发明申请
US20120074585A1 Semiconductor Device and Method of Forming TSV Interposer With Semiconductor Die and Build-Up Interconnect Structure on Opposing Surfaces of the Interposer
有权
半导体器件和形成具有半导体晶片的TSV插入件的方法和内插器的相对表面上的建立互连结构
- 专利标题： Semiconductor Device and Method of Forming TSV Interposer With Semiconductor Die and Build-Up Interconnect Structure on Opposing Surfaces of the Interposer
- 专利标题（中）： 半导体器件和形成具有半导体晶片的TSV插入件的方法和内插器的相对表面上的建立互连结构
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申请号： US13184253申请日： 2011-07-15
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公开(公告)号： US20120074585A1公开(公告)日： 2012-03-29
- 发明人: Jun Mo Koo , Pandi Chelvam Marimuthu , Jae Hun Ku , Seung Wook Yoon
- 申请人： Jun Mo Koo , Pandi Chelvam Marimuthu , Jae Hun Ku , Seung Wook Yoon
- 申请人地址： SG Singapore
- 专利权人： STATS ChipPAC, Ltd.
- 当前专利权人： STATS ChipPAC, Ltd.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/56
摘要：
A semiconductor device has a substrate with first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the substrate. A first conductive layer is formed over the first surface of the substrate electrically connected to the conductive vias. A first semiconductor die is mounted over the first surface of the substrate. The first semiconductor die and substrate are mounted to a carrier. An encapsulant is deposited over the first semiconductor die, substrate, and carrier. A portion of the second surface of the substrate is removed to expose the conductive vias. An interconnect structure is formed over a surface of the substrate opposite the first semiconductor die. A second semiconductor die can be stacked over the first semiconductor die. A second semiconductor die can be mounted over the first surface of the substrate adjacent to the first semiconductor die.