Invention Application
- Patent Title: TRENCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): TRENCH基板及其制造方法
-
Application No.: US13310319Application Date: 2011-12-02
-
Publication No.: US20120077333A1Publication Date: 2012-03-29
- Inventor: Young Gwan KO , Ryoichi WATANABE , Sang Soo LEE
- Applicant: Young Gwan KO , Ryoichi WATANABE , Sang Soo LEE
- Applicant Address: KR Gyunggi-do
- Assignee: ELECTRO-MECHANICS CO., LTD.
- Current Assignee: ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Gyunggi-do
- Priority: KR10-2009-0033216 20090416
- Main IPC: H01L21/78
- IPC: H01L21/78

Abstract:
Disclosed herein are a trench substrate and a method of manufacturing the same. The trench substrate includes a base substrate, an insulating layer formed on one side or both sides of the base substrate and including trenches formed in a circuit region and a dummy region positioned at a peripheral edge of the trench substrate, and a circuit layer formed in the trenches of the circuit region through a plating process and including a circuit pattern and vias. Thanks to formation of the trenches in the dummy region and the cutting region, deviation in thickness of a plating layer formed on the insulating layer in a plating process is improved upon.
Public/Granted literature
- US08883647B2 Method of manufacturing of trench substrate Public/Granted day:2014-11-11
Information query
IPC分类: