发明申请
- 专利标题: SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 专利标题(中): 半导体器件制造方法
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申请号: US13081629申请日: 2011-04-07
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公开(公告)号: US20120077341A1公开(公告)日: 2012-03-29
- 发明人: Yoshifumi Nishi , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki
- 申请人: Yoshifumi Nishi , Atsuhiro Kinoshita , Hirotaka Nishino , Masamichi Suzuki
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-218383 20100929
- 主分类号: H01L21/283
- IPC分类号: H01L21/283
摘要:
In a semiconductor device manufacturing method according to an exemplary embodiment, a sulfur-containing film containing sulfur is deposited on an n-type semiconductor, a first metal film containing a first metal is deposited on the sulfur-containing film, a heat treatment is performed to form a metal semiconductor compound film by reacting the n-type semiconductor and the sulfur-containing film, and to introduce sulfur to an interface between the n-type semiconductor and the metal semiconductor compound film being formed.
公开/授权文献
- US08450208B2 Semiconductor device manufacturing method 公开/授权日:2013-05-28
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