发明申请
US20120077341A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
半导体器件制造方法

SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要:
In a semiconductor device manufacturing method according to an exemplary embodiment, a sulfur-containing film containing sulfur is deposited on an n-type semiconductor, a first metal film containing a first metal is deposited on the sulfur-containing film, a heat treatment is performed to form a metal semiconductor compound film by reacting the n-type semiconductor and the sulfur-containing film, and to introduce sulfur to an interface between the n-type semiconductor and the metal semiconductor compound film being formed.
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