发明申请
- 专利标题： Semiconductor Devices and Methods of Manufacturing Thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12895664申请日： 2010-09-30
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公开(公告)号： US20120080686A1公开(公告)日： 2012-04-05
- 发明人: Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
- 申请人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L29/04 ; H01L21/20
摘要：
In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.
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