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公开(公告)号：US09245760B2
公开(公告)日：2016-01-26
申请号：US12895664
申请日：2010-09-30
申请人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
发明人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
IPC分类号： H01L21/20 , H01L21/306 , H01L21/02 , H01L21/78 , H01L29/78
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/0262 , H01L21/306 , H01L21/30621 , H01L21/3065 , H01L21/324 , H01L21/78 , H01L29/045 , H01L29/45 , H01L29/7846 , H01L29/7848
摘要： In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.
摘要翻译： 在一个实施例中，形成半导体器件的方法包括在衬底的顶表面上形成第一多孔半导体层。 在第一多孔半导体层上形成第一外延层。 在第一外延层内和上方形成电路。 在不完全氧化第一外延层的情况下形成电路。
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公开(公告)号：US20120080686A1
公开(公告)日：2012-04-05
申请号：US12895664
申请日：2010-09-30
申请人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
发明人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/0262 , H01L21/306 , H01L21/30621 , H01L21/3065 , H01L21/324 , H01L21/78 , H01L29/045 , H01L29/45 , H01L29/7846 , H01L29/7848
摘要： In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.
摘要翻译： 在一个实施例中，形成半导体器件的方法包括在衬底的顶表面上形成第一多孔半导体层。 在第一多孔半导体层上形成第一外延层。 在第一外延层内和上方形成电路。 在不完全氧化第一外延层的情况下形成电路。
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公开(公告)号：US20120225540A1
公开(公告)日：2012-09-06
申请号：US13407728
申请日：2012-02-28
IPC分类号： H01L21/20
CPC分类号： H01L21/02658 , H01L21/76202 , H01L21/76224 , H01L29/8611 , Y10T428/218
摘要： A method for fabricating a porous semiconductor body region, comprising:producing at least one trench in a semiconductor body, starting from a surface of the semiconductor body, then producing at least one porous semiconductor body region in the semiconductor body starting from the at least one trench at least along a portion of the side walls of the trench, and then filling the trench with a semiconductor material (15) of the semiconductor body.
摘要翻译： 一种制造多孔半导体体区域的方法，包括：从所述半导体本体的表面开始，在所述半导体本体中形成至少一个沟槽，然后在所述半导体本体中从所述至少一个 沟槽，至少沿着沟槽的侧壁的一部分，然后用半导体本体的半导体材料（15）填充沟槽。
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公开(公告)号：US08466046B2
公开(公告)日：2013-06-18
申请号：US13407728
申请日：2012-02-28
CPC分类号： H01L21/02658 , H01L21/76202 , H01L21/76224 , H01L29/8611 , Y10T428/218
摘要： A method may include producing at least one trench in a semiconductor body, starting from a surface of the semiconductor body, then producing at least one porous semiconductor body region in the semiconductor body starting from the at least one trench at least along a portion of the side walls of the trench, and then filling the trench with a semiconductor material of the semiconductor body.
摘要翻译： 一种方法可以包括从半导体本体的表面开始产生半导体本体中的至少一个沟槽，然后至少沿着半导体本体的一部分从至少一个沟槽起始在半导体本体中产生至少一个多孔半导体本体区域 沟槽的侧壁，然后用半导体本体的半导体材料填充沟槽。
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公开(公告)号：US20130065379A1
公开(公告)日：2013-03-14
申请号：US13229861
申请日：2011-09-12
申请人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
发明人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
IPC分类号： H01L21/20
CPC分类号： H01L21/3223 , H01L21/02378 , H01L21/02381 , H01L21/02505 , H01L21/02513 , H01L21/02664 , H01L21/0475 , H01L21/26506 , H01L21/324 , H01L21/3247 , H01L29/1608
摘要： A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.
摘要翻译： 一种制造半导体器件的方法包括形成半导体本体的多孔区域。 半导体本体在多孔区域中包括多孔结构。 在多孔区域上形成半导体层。 在半导体层中形成半导体区域。 然后，半导体层沿着多孔区域与半导体本体分离，包括通过热处理将氢引入多孔区域。
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公开(公告)号：US08883612B2
公开(公告)日：2014-11-11
申请号：US13229861
申请日：2011-09-12
申请人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
发明人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
IPC分类号： H01L21/00 , H01L21/02 , H01L21/324 , H01L21/265 , H01L29/16
CPC分类号： H01L21/3223 , H01L21/02378 , H01L21/02381 , H01L21/02505 , H01L21/02513 , H01L21/02664 , H01L21/0475 , H01L21/26506 , H01L21/324 , H01L21/3247 , H01L29/1608
摘要： A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.
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公开(公告)号：US20100210091A1
公开(公告)日：2010-08-19
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/762 , H01L21/461 , H01L21/22 , H01L21/38 , H01L21/302
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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公开(公告)号：US08288258B2
公开(公告)日：2012-10-16
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/306
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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公开(公告)号：US20100044838A1
公开(公告)日：2010-02-25
申请号：US12543995
申请日：2009-08-19
IPC分类号： H01L23/544 , H01L21/302
CPC分类号： H01L21/78 , H01L29/0692 , H01L29/32 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component having a semiconductor body includes an active region and a marginal region surrounding the active region. The marginal region extends from the active region as far as an edge of the semiconductor body. A zone composed of porous material is formed in the marginal region.
摘要翻译： 具有半导体主体的半导体部件包括活性区域和围绕有源区域的边缘区域。 边缘区域从有源区域延伸到半导体本体的边缘。 在边缘区域形成由多孔材料构成的区域。
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公开(公告)号：US20090298270A1
公开(公告)日：2009-12-03
申请号：US12474464
申请日：2009-05-29
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/263 , H01L21/26506 , H01L21/3242
摘要： A method for producing a semiconductor is disclosed. One embodiment provides a p-doped semiconductor body having a first side and a second side. An n-doped zone is formed in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body. A pn junction arises in the semiconductor body. The second side of the semiconductor body is removed at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 公开了半导体的制造方法。 一个实施例提供了具有第一侧和第二侧的p掺杂半导体本体。 通过将半导体本体中的质子经由第一侧向下注入到半导体本体的特定深度并且随后至少加热半导体本体的质子注入区域，在半导体本体中形成n掺杂区。 在半导体体中产生pn结。 半导体主体的第二面至少与在pn结处跨过的空间电荷区域一样被去除。
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