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公开(公告)号：US09245760B2
公开(公告)日：2016-01-26
申请号：US12895664
申请日：2010-09-30
申请人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
发明人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
IPC分类号： H01L21/20 , H01L21/306 , H01L21/02 , H01L21/78 , H01L29/78
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/0262 , H01L21/306 , H01L21/30621 , H01L21/3065 , H01L21/324 , H01L21/78 , H01L29/045 , H01L29/45 , H01L29/7846 , H01L29/7848
摘要： In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.
摘要翻译： 在一个实施例中，形成半导体器件的方法包括在衬底的顶表面上形成第一多孔半导体层。 在第一多孔半导体层上形成第一外延层。 在第一外延层内和上方形成电路。 在不完全氧化第一外延层的情况下形成电路。
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公开(公告)号：US20120080686A1
公开(公告)日：2012-04-05
申请号：US12895664
申请日：2010-09-30
申请人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
发明人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/0262 , H01L21/306 , H01L21/30621 , H01L21/3065 , H01L21/324 , H01L21/78 , H01L29/045 , H01L29/45 , H01L29/7846 , H01L29/7848
摘要： In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.
摘要翻译： 在一个实施例中，形成半导体器件的方法包括在衬底的顶表面上形成第一多孔半导体层。 在第一多孔半导体层上形成第一外延层。 在第一外延层内和上方形成电路。 在不完全氧化第一外延层的情况下形成电路。
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公开(公告)号：US20090298270A1
公开(公告)日：2009-12-03
申请号：US12474464
申请日：2009-05-29
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/263 , H01L21/26506 , H01L21/3242
摘要： A method for producing a semiconductor is disclosed. One embodiment provides a p-doped semiconductor body having a first side and a second side. An n-doped zone is formed in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body. A pn junction arises in the semiconductor body. The second side of the semiconductor body is removed at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 公开了半导体的制造方法。 一个实施例提供了具有第一侧和第二侧的p掺杂半导体本体。 通过将半导体本体中的质子经由第一侧向下注入到半导体本体的特定深度并且随后至少加热半导体本体的质子注入区域，在半导体本体中形成n掺杂区。 在半导体体中产生pn结。 半导体主体的第二面至少与在pn结处跨过的空间电荷区域一样被去除。
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公开(公告)号：US08445993B2
公开(公告)日：2013-05-21
申请号：US13332628
申请日：2011-12-21
IPC分类号： H01L27/00
CPC分类号： H01L21/78 , H01L29/0692 , H01L29/32 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer is disclosed. One embodiment provides at least two semiconductor components each having an active region, and wherein at least one zone composed of porous material is arranged between the active regions of the semiconductor components.
摘要翻译： 公开了半导体晶片。 一个实施例提供至少两个半导体部件，每个半导体部件各自具有有源区，并且其中由多孔材料组成的至少一个区域被布置在半导体部件的有源区域之间。
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公开(公告)号：US20120091564A1
公开(公告)日：2012-04-19
申请号：US13332628
申请日：2011-12-21
CPC分类号： H01L21/78 , H01L29/0692 , H01L29/32 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer is disclosed. One embodiment provides at least two semiconductor components each having an active region, and wherein at least one zone composed of porous material is arranged between the active regions of the semiconductor components.
摘要翻译： 公开了半导体晶片。 一个实施例提供至少两个半导体部件，每个半导体部件各自具有有源区，并且其中由多孔材料组成的至少一个区域被布置在半导体部件的有源区域之间。
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公开(公告)号：US08102028B2
公开(公告)日：2012-01-24
申请号：US12543995
申请日：2009-08-19
IPC分类号： H01L23/00
CPC分类号： H01L21/78 , H01L29/0692 , H01L29/32 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component having a semiconductor body includes an active region and a marginal region surrounding the active region. The marginal region extends from the active region as far as an edge of the semiconductor body. A zone composed of porous material is formed in the marginal region.
摘要翻译： 具有半导体主体的半导体部件包括活性区域和围绕有源区域的边缘区域。 边缘区域从有源区域延伸到半导体本体的边缘。 在边缘区域形成由多孔材料构成的区域。
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公开(公告)号：US08288258B2
公开(公告)日：2012-10-16
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/306
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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公开(公告)号：US20100044838A1
公开(公告)日：2010-02-25
申请号：US12543995
申请日：2009-08-19
IPC分类号： H01L23/544 , H01L21/302
CPC分类号： H01L21/78 , H01L29/0692 , H01L29/32 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component having a semiconductor body includes an active region and a marginal region surrounding the active region. The marginal region extends from the active region as far as an edge of the semiconductor body. A zone composed of porous material is formed in the marginal region.
摘要翻译： 具有半导体主体的半导体部件包括活性区域和围绕有源区域的边缘区域。 边缘区域从有源区域延伸到半导体本体的边缘。 在边缘区域形成由多孔材料构成的区域。
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公开(公告)号：US20100210091A1
公开(公告)日：2010-08-19
申请号：US12769976
申请日：2010-04-29
IPC分类号： H01L21/762 , H01L21/461 , H01L21/22 , H01L21/38 , H01L21/302
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译： 一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。
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10.发明授权公开(公告)号：US08779462B2
公开(公告)日：2014-07-15
申请号：US12123278
申请日：2008-05-19
CPC分类号： H01L29/36 , H01L21/22 , H01L21/26513 , H01L21/2652 , H01L21/3225 , H01L29/32 , H03H9/02047 , H03H9/175
摘要： The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×1012 cm−3.
摘要翻译： 半导体衬底包括具有导带边缘和价带边缘的高电阻半导体材料，带隙由带隙分开，其中半导体材料包括受体或施主杂质原子或晶体缺陷，其能级位于至少120meV 导带边缘，以及带隙中的价带边缘; 并且其中杂质原子或晶体缺陷的浓度大于1×10 12 cm -3。
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