发明申请
US20120081638A1 LIGHT SENSING ELEMENT, SEMICONDUCTOR DEVICE, ELECTRONIC EQUIPMENT, MANUFACTURING METHOD OF LIGHT SENSING ELEMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
光感元件,半导体器件,电子设备,光感元件的制造方法及半导体器件的制造方法

LIGHT SENSING ELEMENT, SEMICONDUCTOR DEVICE, ELECTRONIC EQUIPMENT, MANUFACTURING METHOD OF LIGHT SENSING ELEMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要:
A light sensing element includes a photodiode formed on a semiconductor substrate surface, and a laminated structure formed on the photodiode, wherein the laminated structure includes a first layer formed of a silicon oxide film, a second layer formed on the first layer and formed of a silicon nitride film, and a third layer formed on the second layer and formed of a polysilicon film.
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