公开(公告)号：US08803272B2

公开(公告)日：2014-08-12

申请号：US12591710

申请日：2009-11-30

申请人： Hiroshi Yumoto ,  Shuji Yoneda ,  Tomokazu Mukai ,  Katsuhiko Takeuchi

发明人： Hiroshi Yumoto ,  Shuji Yoneda ,  Tomokazu Mukai ,  Katsuhiko Takeuchi

IPC分类号： H01L31/06

CPC分类号： H01L31/103 ,  G11B7/13 ,  H01L27/1463 ,  H01L31/035272 ,  H03F3/087

摘要： A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.

摘要翻译： 半导体器件包括：P型半导体衬底; 形成在P型半导体衬底上的第一P型半导体层; 形成在所述第一P型半导体层上并且具有比所述第一P型半导体层低的P型杂质浓度的第二P型半导体层; 形成在第二P型半导体层上的形成阴极区域的N型半导体层; 通过在第二P型半导体层的部分区域中扩散P型杂质形成的第一P型扩散层; 第二P型扩散层，其通过在第二P型半导体层中扩散P型杂质而形成，以便以比第一P-型半导体层低的P型杂质浓度存在于第一P型扩散层的下方， 型扩散层; 以及以使得N型半导体层和第一P型扩散层彼此隔离的方式形成的光电二极管。

公开(公告)号：US20120081638A1

公开(公告)日：2012-04-05

申请号：US13242416

申请日：2011-09-23

申请人： Hiroshi Yumoto ,  Shuji Yoneda ,  Yusuke Murakawa ,  Hideo Yamagata

发明人： Hiroshi Yumoto ,  Shuji Yoneda ,  Yusuke Murakawa ,  Hideo Yamagata

IPC分类号： G02F1/1333 ,  G01J1/44 ,  H01L31/18 ,  H01L31/102

CPC分类号： H01L31/103 ,  G01J1/44 ,  G02F2001/13312

摘要： A light sensing element includes a photodiode formed on a semiconductor substrate surface, and a laminated structure formed on the photodiode, wherein the laminated structure includes a first layer formed of a silicon oxide film, a second layer formed on the first layer and formed of a silicon nitride film, and a third layer formed on the second layer and formed of a polysilicon film.

摘要翻译： 光敏元件包括形成在半导体衬底表面上的光电二极管和形成在光电二极管上的叠层结构，其中层压结构包括由氧化硅膜形成的第一层，形成在第一层上的第二层， 氮化硅膜和形成在第二层上并由多晶硅膜形成的第三层。

公开(公告)号：US20100155875A1

公开(公告)日：2010-06-24

申请号：US12591710

申请日：2009-11-30

申请人： Hiroshi Yumoto ,  Shuji Yoneda ,  Tomokazu Mukai ,  Katsuhiko Takeuchi

发明人： Hiroshi Yumoto ,  Shuji Yoneda ,  Tomokazu Mukai ,  Katsuhiko Takeuchi

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/103 ,  G11B7/13 ,  H01L27/1463 ,  H01L31/035272 ,  H03F3/087

摘要： A semiconductor device includes: a P-type semiconductor substrate; a first P-type semiconductor layer formed on the P-type semiconductor substrate; a second P-type semiconductor layer formed on the first P-type semiconductor layer and having a lower P-type impurity concentration than the first P-type semiconductor layer; an N-type semiconductor layer, which will form a cathode region, formed on the second P-type semiconductor layer; a first P-type diffusion layer formed by diffusing a P-type impurity in a partial region of the second P-type semiconductor layer; a second P-type diffusion layer formed by diffusing a P-type impurity in the second P-type semiconductor layer so as to be present adjacently beneath the first P-type diffusion layer at a lower P-type impurity concentration than the first P-type diffusion layer; and a photodiode formed in such a manner that the N-type semiconductor layer and the first P-type diffusion layer are isolated from each other.

摘要翻译： 半导体器件包括：P型半导体衬底; 形成在P型半导体衬底上的第一P型半导体层; 形成在所述第一P型半导体层上并且具有比所述第一P型半导体层低的P型杂质浓度的第二P型半导体层; 形成在第二P型半导体层上的形成阴极区域的N型半导体层; 通过在第二P型半导体层的部分区域中扩散P型杂质形成的第一P型扩散层; 第二P型扩散层，其通过在第二P型半导体层中扩散P型杂质而形成，以便以比第一P-型半导体层低的P型杂质浓度存在于第一P型扩散层的下方， 型扩散层; 以及以使得N型半导体层和第一P型扩散层彼此隔离的方式形成的光电二极管。