发明申请
US20120083089A1 FABRICATING METHOD OF METAL SILICIDE LAYER, FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME AND SEMICONDUCTOR DEVICE FABRICATED USING THE METHOD
有权
金属硅化物层的制造方法，使用其的半导体器件的制造方法和使用该方法制造的半导体器件
- 专利标题： FABRICATING METHOD OF METAL SILICIDE LAYER, FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME AND SEMICONDUCTOR DEVICE FABRICATED USING THE METHOD
- 专利标题（中）： 金属硅化物层的制造方法，使用其的半导体器件的制造方法和使用该方法制造的半导体器件
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申请号： US13239521申请日： 2011-09-22
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公开(公告)号： US20120083089A1公开(公告)日： 2012-04-05
- 发明人: Jin-Bum KIM , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
- 申请人： Jin-Bum KIM , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
- 优先权： KR10-2010-0095928 20101001
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/22
摘要：
A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.