发明申请
US20120085991A1 GRAPHENE NANORIBBONS, METHOD OF FABRICATION AND THEIR USE IN ELECTRONIC DEVICES
有权
石墨纳米纤维,制造方法及其在电子设备中的应用
- 专利标题: GRAPHENE NANORIBBONS, METHOD OF FABRICATION AND THEIR USE IN ELECTRONIC DEVICES
- 专利标题(中): 石墨纳米纤维,制造方法及其在电子设备中的应用
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申请号: US12902620申请日: 2010-10-12
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公开(公告)号: US20120085991A1公开(公告)日: 2012-04-12
- 发明人: Guy Cohen , Christos D. Dimitrakopoulos , Alfred Grill , Robert L. Wisnieff
- 申请人: Guy Cohen , Christos D. Dimitrakopoulos , Alfred Grill , Robert L. Wisnieff
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/04 ; B82Y99/00
摘要:
The present disclosure provides a semiconductor structure including a nanoribbon-containing layer of alternating graphene nanoribbons separated by alternating insulating ribbons. The alternating graphene nanoribbons are parallel to a surface of an underlying substrate and, in some embodiments, might be oriented along crystallographic directions of the substrate. The alternating insulating ribbons may comprise hydrogenated graphene, i.e., graphane, fluorinated graphene, or fluorographene. The semiconductor structure mentioned above can be formed by selectively converting portions of an initial graphene layer into alternating insulating ribbons, while the non-converted portions of the initial graphene form the alternating graphene nanoribbons. Semiconductor devices such as, for example, field effect transistors, can be formed atop the semiconductor structure provided in the present disclosure.