发明申请
- 专利标题： STRESS MEMORIZATION PROCESS IMPROVEMENT FOR IMPROVED TECHNOLOGY PERFORMANCE
- 专利标题（中）： 应力记忆过程改进改进的技术性能
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申请号： US12902624申请日： 2010-10-12
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公开(公告)号： US20120086071A1公开(公告)日： 2012-04-12
- 发明人: Lahir Shaik Adam , Bruce B. Doris , Sanjay Mehta , Zhengmao Zhu
- 申请人： Lahir Shaik Adam , Bruce B. Doris , Sanjay Mehta , Zhengmao Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/336
摘要：
Semiconductor substrate with a deformed gate region and a method for the fabrication thereof. The semiconductor substrate has improved device performance compared to devices without a deformed gate region and decreased dopant loss compared to devices with deformed source/drain regions.
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