发明申请
US20120091515A1 Semiconductor Devices Having Backside Illuminated Image Sensors
有权
具有背面照明图像传感器的半导体器件
- 专利标题： Semiconductor Devices Having Backside Illuminated Image Sensors
- 专利标题（中）： 具有背面照明图像传感器的半导体器件
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申请号： US13180898申请日： 2011-07-12
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公开(公告)号： US20120091515A1公开(公告)日： 2012-04-19
- 发明人: Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
- 申请人： Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0099823 20101013
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L23/48 ; H01L31/0232
摘要：
A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.
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