Invention Application
- Patent Title: HIGH VOLTAGE RESISTOR
- Patent Title (中): 高压电阻
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Application No.: US12905840Application Date: 2010-10-15
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Publication No.: US20120091529A1Publication Date: 2012-04-19
- Inventor: Chih-Chang Cheng , Ruey-Hsin Liu , Chih-Wen (Albert) Yao , Ru-Yi Su , Fu-Chih Yang , Chun Lin Tsai
- Applicant: Chih-Chang Cheng , Ruey-Hsin Liu , Chih-Wen (Albert) Yao , Ru-Yi Su , Fu-Chih Yang , Chun Lin Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/02
Abstract:
Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of the resistor. The voltage protection device includes a second doped region that is electrically coupled to the second portion of the resistor. The first and second doped regions have opposite doping polarities.
Public/Granted literature
- US08587073B2 High voltage resistor Public/Granted day:2013-11-19
Information query
IPC分类:
