发明申请
US20120091980A1 SYSTEM AND METHOD FOR CONTROLLING VOLTAGE RAMPING FOR AN OUTPUT OPERATION IN A SEMICONDUCTOR MEMORY DEVICE
有权
用于控制半导体存储器件中的输出操作的电压漂移的系统和方法
- 专利标题： SYSTEM AND METHOD FOR CONTROLLING VOLTAGE RAMPING FOR AN OUTPUT OPERATION IN A SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 用于控制半导体存储器件中的输出操作的电压漂移的系统和方法
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申请号： US12906661申请日： 2010-10-18
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公开(公告)号： US20120091980A1公开(公告)日： 2012-04-19
- 发明人: Ju-An Chiang
- 申请人： Ju-An Chiang
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人： MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： G05F1/10
- IPC分类号： G05F1/10
摘要：
A voltage driving circuit comprises a current bias generating unit and a voltage driving unit. The current bias generating unit is configured to receive a mode signal and to generate a mode selection current in response to the mode signal. The voltage driving unit is coupled to the current bias generating unit, and is configured to receive the mode selection current and to drive an output voltage at a slew rate that is set according to the mode selection current. The voltage driving unit can include a plurality of stages, where each stage is configured to drive the output voltage at a respective different slew rate according to the mode signal.
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