发明申请
- 专利标题： VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD
- 专利标题（中）： 蒸气沉积装置和蒸气沉积方法
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申请号： US13265678申请日： 2010-04-21
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公开(公告)号： US20120094014A1公开(公告)日： 2012-04-19
- 发明人: Yuji Ono , Tomohiko Edura , Teruyuki Hayashi , Akitake Tamura , Misako Saito , Hirotaka Kuwada , Shimon Otsuki
- 申请人： Yuji Ono , Tomohiko Edura , Teruyuki Hayashi , Akitake Tamura , Misako Saito , Hirotaka Kuwada , Shimon Otsuki
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-105871 20090424; JP2010-048734 20100305
- 国际申请： PCT/JP2010/057058 WO 20100421
- 主分类号： B05D5/06
- IPC分类号： B05D5/06 ; B67D7/06 ; C23C16/448
摘要：
There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit.