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公开(公告)号:US20120094014A1
公开(公告)日:2012-04-19
申请号:US13265678
申请日:2010-04-21
申请人: Yuji Ono , Tomohiko Edura , Teruyuki Hayashi , Akitake Tamura , Misako Saito , Hirotaka Kuwada , Shimon Otsuki
发明人: Yuji Ono , Tomohiko Edura , Teruyuki Hayashi , Akitake Tamura , Misako Saito , Hirotaka Kuwada , Shimon Otsuki
IPC分类号: B05D5/06 , B67D7/06 , C23C16/448
CPC分类号: C23C14/12 , C23C14/228 , C23C14/246
摘要: There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit.
摘要翻译: 提供了能够高度迁移率地有效地升华/熔化颗粒状有机材料的气相沉积设备和气相沉积方法。 用于通过气相沉积在基板上形成薄膜的气相沉积装置包括构造成供给材料气体的可降压材料供给装置和被配置为在基板上形成薄膜的成膜装置。 材料供给装置包括:配置为控制材料量的量控制单元和构造成使从量控制单元供给的材料蒸发的原料气体生成单元。