发明申请
- 专利标题： RESIST FEATURE AND REMOVABLE SPACER PITCH DOUBLING PATTERNING METHOD FOR PILLAR STRUCTURES
- 专利标题（中）： 用于支柱结构的阻力特征和可拆卸间隔器双重方式
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申请号： US13331267申请日： 2011-12-20
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公开(公告)号： US20120094478A1公开(公告)日： 2012-04-19
- 发明人: Yung-Tin Chen , Steven J. Radigan
- 申请人： Yung-Tin Chen , Steven J. Radigan
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/311
摘要：
A method of making a semiconductor device includes forming a layer over a substrate, forming a plurality of spaced apart features of imagable material over the layer, forming sidewall spacers on the plurality of features and filling a space between a first sidewall spacer on a first feature and a second sidewall spacer on a second feature with a filler feature. The method also includes removing the sidewall spacers to leave the first feature, the filler feature and the second feature spaced apart from each other, and etching the layer using the first feature, the filler feature and the second feature as a mask.
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