发明申请
- 专利标题： DIRECT CONTACT IN TRENCH WITH THREE-MASK SHIELD GATE PROCESS
- 专利标题（中）： 直接与三层屏蔽门过程接触
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申请号： US13343666申请日： 2012-01-04
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公开(公告)号： US20120098059A1公开(公告)日： 2012-04-26
- 发明人: Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
- 申请人： Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
- 申请人地址： US CA Sunnyvale
- 专利权人： ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- 当前专利权人： ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/78
摘要：
A semiconductor substrate may be etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material separated by an insulator is formed over the first conductive material. A first insulator layer is formed on the trenches. A body layer is formed in the substrate. A source is formed in the body layer. A second insulator layer is formed on the trenches and source. Source and gate contacts are formed through the second insulator layer. Source and gate metal are formed on the second insulator layer. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
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