Invention Application
US20120103519A1 Plasma Etch Resistant, Highly Oriented Yttria Films, Coated Substrates and Related Methods
审中-公开
等离子体蚀刻，高取向的氧化钇薄膜，涂层基板和相关方法
- Patent Title: Plasma Etch Resistant, Highly Oriented Yttria Films, Coated Substrates and Related Methods
- Patent Title (中): 等离子体蚀刻，高取向的氧化钇薄膜，涂层基板和相关方法
-
Application No.: US13280129Application Date: 2011-10-24
-
Publication No.: US20120103519A1Publication Date: 2012-05-03
- Inventor: Mohammed Aheem , Sang-Ho Lee , Thomas Mercer , Vasil Vorsa
- Applicant: Mohammed Aheem , Sang-Ho Lee , Thomas Mercer , Vasil Vorsa
- Assignee: Greene, Tweed of Delaware, Inc.
- Current Assignee: Greene, Tweed of Delaware, Inc.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C14/34 ; C23C16/48 ; C23C4/12 ; B44C1/22 ; B05D5/00
Abstract:
Included within the scope of the invention are plasma etch-resistant films for substrates. The films include a yttria material and a at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. Also included are methods of manufacturing plasma etch-resistant films on a substrate. Such methods include applying a yttria material-containing composition onto at least a portion of a surface of a substrate to form a film. The film includes a yttria material and at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}.
Information query
IPC分类:
