Invention Application
US20120103660A1 GRID AND NANOSTRUCTURE TRANSPARENT CONDUCTOR FOR LOW SHEET RESISTANCE APPLICATIONS
审中-公开
用于低电阻应用的网格和纳米结构透明导体
- Patent Title: GRID AND NANOSTRUCTURE TRANSPARENT CONDUCTOR FOR LOW SHEET RESISTANCE APPLICATIONS
- Patent Title (中): 用于低电阻应用的网格和纳米结构透明导体
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Application No.: US13287881Application Date: 2011-11-02
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Publication No.: US20120103660A1Publication Date: 2012-05-03
- Inventor: Rahul Gupta , Forian Pschenitzka , Karl Pichler
- Applicant: Rahul Gupta , Forian Pschenitzka , Karl Pichler
- Applicant Address: US CA Sunnyvale
- Assignee: Cambrios Technologies Corporation
- Current Assignee: Cambrios Technologies Corporation
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01B5/00
- IPC: H01B5/00 ; B32B37/14 ; B32B37/12 ; B05D5/12 ; H01B13/00

Abstract:
Transparent conductors and methods of forming same are provided. A transparent conductor can include a nanostructure layer and a low sheet resistance grid disposed on a transfer film surface having an acceptable level of surface roughness. The presence of the low sheet resistance grid lowers the sheet resistance of the transparent conductor to an acceptable level. After release of the transparent conductor from the transfer film, the surface roughness of the transparent conductor will be at least comparable to the surface roughness of the transfer film.
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