发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件的半导体器件和制造方法
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申请号： US13278809申请日： 2011-10-21
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公开(公告)号： US20120104509A1公开(公告)日： 2012-05-03
- 发明人: Koichi Matsumoto
- 申请人： Koichi Matsumoto
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-243251 20101029
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/20 ; H01L21/28 ; H01L29/772
摘要：
A semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.
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