发明申请
- 专利标题: Semiconductor Devices and Methods of Manufacturing the Same
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13241324申请日: 2011-09-23
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公开(公告)号: US20120104514A1公开(公告)日: 2012-05-03
- 发明人: Sang-Jine Park , Bo-Un Yoon , Jeong-Nam Han , Myung-Geun Song
- 申请人: Sang-Jine Park , Bo-Un Yoon , Jeong-Nam Han , Myung-Geun Song
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2010-0108669 20101103
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.
公开/授权文献
- US08803248B2 Semiconductor devices and methods of manufacturing the same 公开/授权日:2014-08-12