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公开(公告)号:US08803248B2
公开(公告)日:2014-08-12
申请号:US13241324
申请日:2011-09-23
申请人: Sang-Jine Park , Bo-Un Yoon , Jeong-Nam Han , Myung-Geun Song
发明人: Sang-Jine Park , Bo-Un Yoon , Jeong-Nam Han , Myung-Geun Song
IPC分类号: H01L27/088
CPC分类号: H01L29/66636 , H01L21/28518 , H01L21/76802 , H01L29/4175 , H01L29/41775 , H01L29/495 , H01L29/4966 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/66628 , H01L29/7834 , H01L29/7845 , H01L29/7848
摘要: Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.
摘要翻译: 提供一种可以促进自对准硅化物工艺并且可以防止栅极由于不对准而被损坏的半导体器件,以及半导体器件的制造方法。 该方法包括在具有形成在栅极图案的两侧的栅极图案和源极/漏极区域的衬底上形成第一绝缘层图案,第一绝缘层图案具有源极/漏极区域的暴露部分,形成硅化物 在所述暴露的源极/漏极区上形成第二绝缘层,以在所述衬底的整个表面上形成覆盖所述第一绝缘层图案和所述硅化物层的第二绝缘层,以及在所述第二绝缘层中形成接触孔以露出所述硅化物层。
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公开(公告)号:US20120104514A1
公开(公告)日:2012-05-03
申请号:US13241324
申请日:2011-09-23
申请人: Sang-Jine Park , Bo-Un Yoon , Jeong-Nam Han , Myung-Geun Song
发明人: Sang-Jine Park , Bo-Un Yoon , Jeong-Nam Han , Myung-Geun Song
IPC分类号: H01L29/78 , H01L21/336
CPC分类号: H01L29/66636 , H01L21/28518 , H01L21/76802 , H01L29/4175 , H01L29/41775 , H01L29/495 , H01L29/4966 , H01L29/665 , H01L29/66545 , H01L29/6659 , H01L29/66628 , H01L29/7834 , H01L29/7845 , H01L29/7848
摘要: Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.
摘要翻译: 提供一种可以促进自对准硅化物工艺并且可以防止栅极由于不对准而被损坏的半导体器件,以及半导体器件的制造方法。 该方法包括在具有形成在栅极图案的两侧的栅极图案和源极/漏极区域的衬底上形成第一绝缘层图案,第一绝缘层图案具有源极/漏极区域的暴露部分,形成硅化物 在所述暴露的源极/漏极区上形成第二绝缘层,以在所述衬底的整个表面上形成覆盖所述第一绝缘层图案和所述硅化物层的第二绝缘层,以及在所述第二绝缘层中形成接触孔以露出所述硅化物层。
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公开(公告)号:US20090140198A1
公开(公告)日:2009-06-04
申请号:US11918856
申请日:2006-04-18
申请人: Yoon-Gyu Lee , Jin-Ho Lee , Myung-Geun Song , Sin-Ae Song , Ja-Hoo Koo
发明人: Yoon-Gyu Lee , Jin-Ho Lee , Myung-Geun Song , Sin-Ae Song , Ja-Hoo Koo
IPC分类号: C09K13/00
CPC分类号: C09G1/02
摘要: Disclosed herein is a method of preparing a metal oxide suspension, which is advantageous due to the prevention of hydration and agglomeration of the metal oxide and a simple preparation process. The method of preparing a metal oxide suspension according to this invention includes preparing metal oxide, mixing the metal oxide with a solvent and a surface treating agent to obtain a mixture, and wet milling the mixture such that the metal oxide of the mixture has a nanoscale particle size and the metal oxide is uniformly dispersed in the mixture.
摘要翻译: 本文公开了一种制备金属氧化物悬浮液的方法,其由于防止金属氧化物的水合和附聚以及简单的制备方法而是有利的。 根据本发明的制备金属氧化物悬浮液的方法包括制备金属氧化物,将金属氧化物与溶剂和表面处理剂混合以获得混合物,并湿法研磨混合物,使得混合物的金属氧化物具有纳米级 颗粒尺寸和金属氧化物均匀分散在混合物中。
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