Invention Application
- Patent Title: AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME
- Patent Title (中): AVALANCHE光电及其制造方法
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Application No.: US13191758Application Date: 2011-07-27
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Publication No.: US20120104531A1Publication Date: 2012-05-03
- Inventor: Mi-Ran PARK , O-Kyun Kwon
- Applicant: Mi-Ran PARK , O-Kyun Kwon
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2010-0108685 20101103
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/18
Abstract:
Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.
Public/Granted literature
- US08710546B2 Avalanche photodiodes having accurate and reproductible amplification layer Public/Granted day:2014-04-29
Information query
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