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    Avalanche photodiodes having accurate and reproductible amplification layer
    1.
    发明授权
    Avalanche photodiodes having accurate and reproductible amplification layer 有权
    具有准确可再生扩增层的雪崩光电二极管

    公开(公告)号：US08710546B2

    公开(公告)日：2014-04-29

    申请号：US13191758

    申请日：2011-07-27

    Applicant: Mi-Ran Park ,  O-Kyun Kwon

    Inventor： Mi-Ran Park ,  O-Kyun Kwon

    IPC: H01L31/107 ,  H01L31/02

    CPC classification number: H01L31/107 ,  H01L31/02027 ,  H01L31/02161 ,  H01L31/184 ,  Y02E10/544

    Abstract: Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

    Abstract translation: 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。

    WAVELENGTH TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE
    3.
    发明申请
    WAVELENGTH TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE 有权
    波长管外部腔体激光发生装置

    公开(公告)号：US20120093178A1

    公开(公告)日：2012-04-19

    申请号：US13016238

    申请日：2011-01-28

    Applicant: Hyun Soo KIM ,  Ki-Hong YOON ,  Kisoo KIM ,  Byung-Seok CHOI ,  O-Kyun Kwon

    Inventor： Hyun Soo KIM ,  Ki-Hong YOON ,  Kisoo KIM ,  Byung-Seok CHOI ,  O-Kyun Kwon

    IPC: H01S3/10

    CPC classification number: H01S5/142 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/22 ,  H01S5/34306

    Abstract: Provided is a wavelength tunable external cavity laser generating device. The wavelength tunable external cavity laser generating devices includes: an optical amplifier, a comb reflector, and an optical signal processor connected in series on a first substrate; and an external wavelength tunable reflector disposed on a second substrate adjacent to the first substrate and connected to the optical amplifier, wherein the comb reflector includes: a waveguide disposed on the first substrate; a first diffraction grating disposed at one end of the waveguide adjacent to the optical amplifier; and a second diffraction grating disposed at the other end of the waveguide adjacent to the optical signal processor, wherein the optical amplifier, the comb reflector, and the optical signal processor constitute a continuous waveguide.

    Abstract translation: 提供了一种波长可调外腔激光产生装置。 所述波长可调外腔激光产生装置包括：串联在第一基板上的光放大器，梳状反射器和光信号处理器; 以及外部波长可调谐反射器，其设置在与所述第一基板相邻并且连接到所述光学放大器的第二基板上，其中所述梳状反射器包括：布置在所述第一基板上的波导; 设置在与光放大器相邻的波导的一端的第一衍射光栅; 以及第二衍射光栅，其设置在与所述光信号处理器相邻的所述波导的另一端处，其中所述光放大器，所述梳状反射器和所述光信号处理器构成连续波导。

    SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME
    5.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME 有权
    半导体集成电路，包括用于光通信的光栅耦合器及其形成方法

    公开(公告)号：US20100111469A1

    公开(公告)日：2010-05-06

    申请号：US12684677

    申请日：2010-01-08

    Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

    Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

    IPC: G02B6/122

    CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

    Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

    Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

    METHOD AND APPARATUS FOR REPRODUCING FIRST PART OF MUSIC DATA HAVING PLURALITY OF REPEATED PARTS
    6.
    发明申请
    METHOD AND APPARATUS FOR REPRODUCING FIRST PART OF MUSIC DATA HAVING PLURALITY OF REPEATED PARTS 有权
    用于再现具有多次重复部件的音乐数据的第一部分的方法和装置

    公开(公告)号：US20090229447A1

    公开(公告)日：2009-09-17

    申请号：US12250649

    申请日：2008-10-14

    Applicant: O-kyun Kwon ,  Young-Il Park

    Inventor： O-kyun Kwon ,  Young-Il Park

    IPC: G10H7/00

    CPC classification number: G11B27/28 ,  G10H1/0008 ,  G10H2210/061 ,  G10H2240/131 ,  G11B20/10527 ,  G11B27/105 ,  G11B2020/10546 ,  G11B2020/10555 ,  G11B2020/10564

    Abstract: A method and apparatus for reproducing a first part of music data having a plurality of repeated parts includes a method and an apparatus allowing a user to listen to more songs including the repeated parts by searching for a boundary between the first and second parts of the music data having the repeated parts via simple frequency analysis, marking information indicating the found boundary, and reproducing the music data until a part indicated by the marked information is reached. Accordingly, music reproduction satisfaction increases since an inconvenience of manipulating the apparatus for each song is lessened and more songs having different patterns are played.

    Abstract translation: 用于再现具有多个重复部分的音乐数据的第一部分的方法和装置包括允许用户通过搜索音乐的第一和第二部分之间的边界来聆听包括重复部分的更多歌曲的方法和装置 通过简单的频率分析具有重复部分的数据，指示找到的边界的标记信息，以及再现音乐数据，直到达到由标记信息指示的部分。 因此，音乐再现满意度增加，因为操纵用于每首歌曲的装置的麻烦减轻，并且播放具有不同图案的更多歌曲。

    HYBRID METAL BONDED VERTICAL CAVITY SURFACE EMITTING LASER AND FABRICATING METHOD THEREOF
    7.
    发明申请
    HYBRID METAL BONDED VERTICAL CAVITY SURFACE EMITTING LASER AND FABRICATING METHOD THEREOF 审中-公开
    混合金属粘结垂直孔表面发射激光及其制造方法

    公开(公告)号：US20090155942A1

    公开(公告)日：2009-06-18

    申请号：US12355836

    申请日：2009-01-19

    Applicant: O Kyun KWON ,  Mi Ran PARK ,  Won Seok HAN ,  Jong Hee KIM ,  Hyun Woo SONG

    Inventor： O Kyun KWON ,  Mi Ran PARK ,  Won Seok HAN ,  Jong Hee KIM ,  Hyun Woo SONG

    IPC: H01L21/02

    CPC classification number: H01S5/18316 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18377

    Abstract: Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics.

    Abstract translation: 提供了一种在半导体光学器件中制造垂直腔表面发射激光器的方法，包括：将介质镜层结合到具有镜层和有源层的外延结构; 使用金属键合方法将它们结合在新的基板上; 去除现有的基板; 并在新基板上制造垂直腔表面发射激光器。 垂直腔表面发射激光器的制造方法是通过使用外部金属接合方法将垂直空腔表面发射激光器移动并附着到新的衬底而进行的，而不会电和影响上镜和下反射镜以及构成垂直腔的表面发射激光的有源层 腔表面发射激光。 在使用制造垂直腔表面发射激光器的现有方法的同时，通过移动到具有良好热特性的新衬底来制造VCSEL，从而实现良好的发热特性，从而有助于制造具有高可靠性的垂直腔表面发射激光器 和良好的特点。

    Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same
    9.
    发明授权
    Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same 失效

    公开(公告)号：US06621843B2

    公开(公告)日：2003-09-16

    申请号：US09842521

    申请日：2001-04-25

    Applicant: Byueng-Su Yoo ,  O-Kyun Kwon ,  Young-Gu Ju

    Inventor： Byueng-Su Yoo ,  O-Kyun Kwon ,  Young-Gu Ju

    IPC: H01S500

    CPC classification number: B82Y20/00 ,  H01S5/18308 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/2009 ,  H01S5/2072 ,  H01S5/3054 ,  H01S5/34306 ,  H01S2301/176

    Abstract: Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.

    Folded cavity laser
    10.
    发明授权
    Folded cavity laser 失效

    公开(公告)号：US06584136B2

    公开(公告)日：2003-06-24

    申请号：US09882342

    申请日：2001-06-15

    Applicant: Young-Gu Ju ,  Byueng-Su Yoo ,  O-Kyun Kwon

    Inventor： Young-Gu Ju ,  Byueng-Su Yoo ,  O-Kyun Kwon

    IPC: H01S308

    CPC classification number: B82Y20/00 ,  B82Y10/00 ,  H01S5/005 ,  H01S5/0267 ,  H01S5/18

    Abstract: A folded cavity laser for generating a laser beam, includes a substrate provided with a distributed Bragg reflector (DBR); an active medium formed above the DBR for amplifying the laser beam; a first and a second mirrors formed on sides of the active medium, respectively, for making a horizontal cavity and for reflecting the amplified laser beam to the DBR; and a microlens, formed on the substrate opposite the DBR, for making the amplified laser beam astigmatic after passing therethrough.

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