LOW-COST NON-VOLATILE FLASH-RAM MEMORY

Invention Application

US20120107964A1 LOW-COST NON-VOLATILE FLASH-RAM MEMORY 有权

Title translation: 低成本非易失性闪存存储器

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Patent Title: LOW-COST NON-VOLATILE FLASH-RAM MEMORY
Patent Title (中): 低成本非易失性闪存存储器
Application No.: US13345608

Application Date: 2012-01-06
Publication No.: US20120107964A1

Publication Date: 2012-05-03
Inventor: Rajiv Yadav RANJAN , Parviz KESHTBOD , Mahmud ASSAR
Applicant: Rajiv Yadav RANJAN , Parviz KESHTBOD , Mahmud ASSAR
Applicant Address: US CA Fremont
Assignee: Avalanche Technology, Inc.
Current Assignee: Avalanche Technology, Inc.
Current Assignee Address: US CA Fremont
Main IPC: H01L21/8239
IPC: H01L21/8239

Abstract:

A method of flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.

Abstract(Chinese):

闪存RAM存储器的方法包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器非易失性RAM驻留在单片芯片上。非易失性RAM由以三维形式布置的磁存储单元堆叠形成，用于更高密度和更低成本。

Public/Granted literature

US08440471B2 Low-cost non-volatile flash-RAM memory Public/Granted day:2013-05-14

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构