发明申请
- 专利标题： SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体结构及其制造方法
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申请号： US13380380申请日： 2011-02-27
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公开(公告)号： US20120112252A1公开(公告)日： 2012-05-10
- 发明人: Haizhou Yin , Huilong Zhu , Zhijiong Luo
- 申请人： Haizhou Yin , Huilong Zhu , Zhijiong Luo
- 申请人地址： CN Bijing
- 专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人地址： CN Bijing
- 优先权： CN201010526916.2 20101029
- 国际申请： PCT/CN11/71349 WO 20110227
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/28
摘要：
The present invention provides a method for manufacturing a semiconductor structure, which lies in covering a first dielectric layer with a second dielectric layer, forming a first contact hole with a small inner diameter within the second dielectric layer first, then etching the first dielectric layer to form a second contact hole with a much great inner diameter, and finally filling a conductive material into the first contact hole and the second contact hole to form contact plugs. Accordingly, the present invention further provides a semiconductor structure favorable for reducing contact resistance.
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