发明申请
- 专利标题： METHODS OF MANUFACTURING SEMICONDUCTOR CHIPS
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13253425申请日： 2011-10-05
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公开(公告)号： US20120115307A1公开(公告)日： 2012-05-10
- 发明人: Sang Wook Park , Tae Gyeong Chung , Ho Geon Song , Won Chul Lim
- 申请人： Sang Wook Park , Tae Gyeong Chung , Ho Geon Song , Won Chul Lim
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0110032 20101105
- 主分类号： H01L21/78
- IPC分类号： H01L21/78
摘要：
A method of manufacturing semiconductor chips includes providing a semiconductor substrate including circuit regions, irradiating the semiconductor substrate with a laser beam onto to form a frangible layer, and polishing the semiconductor substrate to separate the circuit regions of the semiconductor substrate from one another into semiconductor chips. The frangible layer may be removed completely during the polishing of the semiconductor substrate.
公开/授权文献
- US08431442B2 Methods of manufacturing semiconductor chips 公开/授权日：2013-04-30
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