发明申请
- 专利标题: Ferromagnetic Material Sputtering Target
- 专利标题(中): 铁磁材料溅射靶
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申请号: US13383886申请日: 2010-09-30
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公开(公告)号: US20120118734A1公开(公告)日: 2012-05-17
- 发明人: Atsushi Sato , Atsutoshi Arakawa
- 申请人: Atsushi Sato , Atsutoshi Arakawa
- 申请人地址: JP Tokyo
- 专利权人: JX NIPPON MINING & METALS CORPORATION
- 当前专利权人: JX NIPPON MINING & METALS CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-011326 20100121
- 国际申请: PCT/JP2010/067160 WO 20100930
- 主分类号: C23C14/14
- IPC分类号: C23C14/14 ; C23C14/34
摘要:
A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device.
公开/授权文献
- US09228251B2 Ferromagnetic material sputtering target 公开/授权日:2016-01-05
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