The present disclosure describes a semiconductor device including a semiconductor substrate and a gate stack disposed on the semiconductor substrate. A first spacer element is disposed on the substrate abutting the first gate stack. In an embodiment, the first spacer element includes silicon nitride. A second spacer element is adjacent the first spacer element. In an embodiment, the second spacer element includes silicon oxide. A raised source and a first raised drain is provided laterally contacting sidewalls of the second spacer element. In an embodiment, a contact directly interfaces with the second spacer element.