发明申请
- 专利标题： OXIDE MEMS BEAM
- 专利标题（中）： 氧化物MEMS光束
-
申请号： US12955220申请日： 2010-11-29
-
公开(公告)号： US20120133006A1公开(公告)日： 2012-05-31
- 发明人: Joseph P. Hasselbach , Karen L. Lestage , Anthony K. Stamper
- 申请人： Joseph P. Hasselbach , Karen L. Lestage , Anthony K. Stamper
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/84
- IPC分类号： H01L29/84
摘要：
In one embodiment, a semiconductor structure includes a beam positioned within a sealed cavity, the beam including: an upper insulator layer including one or more layers; and a lower insulator layer including one or more layers, wherein a composite stress of the upper insulator layer is different than a composite stress of the lower insulator layer, such that the beam bends.